Open AccessExperimental study for selection of electrode material for ZnO‐based memristors
Author(s) -
Kumar A.,
Baghini M.S.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.1491
Subject(s) - memristor , materials science , electrode , capacitance , hysteresis , optoelectronics , resistive touchscreen , fabrication , electronic engineering , electrical engineering , condensed matter physics , chemistry , medicine , physics , alternative medicine , pathology , engineering
The fabrication and characterisation of 400 nm‐thick zinc oxide (ZnO)‐based memristor devices with platinum (Pt), chromium (Cr) and gold (Au) metal electrodes are presented. The effect of these electrode materials on the performance of ZnO‐based memristors has been experimentally studied. Metal/ZnO contact limits the memristor switching mechanism, dominating during the resistive switching. It is observed that the ZnO‐based memristor with the Pt electrode shows a better hysteresis compared to Cr and Au metal electrodes. In the case of the Pt electrode, a current ratio of six times in magnitude is observed between the high resistive state and low resistive state at 1 V, where a maximum current density value of 1.25 A/cm 2 is measured. The capacitance of these devices strongly depends on the charge distributed on the surface. Therefore, the capacitance–voltage ( C–V ) behaviour can be used to understand the charge distribution, under various bias conditions. The C–V behaviour of the Pt memristor, so as to understand the contact interface, where the maximum capacitance of 2.3 × 10 −7 F/cm 2 is obtained at 0 V, is also explained.