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Nano‐power tunable bump circuit using wide‐input‐range pseudo‐differential transconductor
Author(s) -
Lu Junjie,
Yang Tan,
Jahan M.S.,
Holleman J.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.0920
Subject(s) - electronic engineering , range (aeronautics) , power (physics) , nano , differential (mechanical device) , electrical engineering , materials science , computer science , physics , engineering , quantum mechanics , composite material , thermodynamics
An ultra‐low‐power tunable bump circuit is presented. It incorporates a novel wide‐input‐range tunable pseudo‐differential transconductor linearised using the drain resistances of saturated transistors. Measurement results show that the transconductor has a 5 V differential input range with <20% of linearity error. The bump circuit demonstrates tunability of the centre, width and height, consuming 18.9 nW power from a 3 V supply, occupying 988 μm 2 in a 0.13 μm CMOS process.

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