Open AccessInvestigation of LaAlO 3 /ZrO 2 / a ‐InGaZnO thin‐film transistors using atmospheric pressure plasma jet
Author(s) -
Wu ChienHung,
Huang HauYuan,
Wang ShuiJinn,
Chang KowMing,
Hsu HsinYu
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.0816
Subject(s) - materials science , thin film transistor , optoelectronics , annealing (glass) , gate dielectric , threshold voltage , dielectric , amorphous solid , transistor , voltage , electrical engineering , nanotechnology , layer (electronics) , composite material , chemistry , organic chemistry , engineering
Amorphous indium–gallium–zinc‐oxide thin‐film transistors ( a ‐IGZO‐TFTs) with the LaAlO 3 /ZrO 2 gate dielectric stack employing a novel atmospheric pressure plasma jet process that results in small subthreshold swing and low threshold voltage are proposed and fabricated. The influence of post‐deposition annealing (PDA) temperature on LaAlO 3 /ZrO 2 gate dielectric stack and device performance was investigated. The equivalent oxide thickness of the LaAlO 3 /ZrO 2 dielectric stack decreases from 11.5 nm without annealing to 7 nm after a 500°C annealing was applied. The LaAlO 3 /ZrO 2 / a ‐InGaZnO TFT with a 500°C annealing exhibits a small subthreshold swing of 77 mV·dec −1 , a high field‐effect mobility of 9 cm 2 ·V −1 ·s −1 and an excellent current ratio of 1.8 × 10 7 , which could be attributed to the improved gate dielectric quality by the PDA. The LaAlO 3 /ZrO 2 / a ‐InGaZnO TFTs with excellent gate control ability allow the device to operate at a low operating voltage with low power consumption.