Open Access2.8 dB conversion gain broadband HBT–HEMT balanced frequency tripler with high harmonic suppression
Author(s) -
Chen GuanYu,
Chang HongYeh,
Weng ShouHsien,
Hsin YueMing,
Wang YuChi
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.0678
Subject(s) - heterojunction bipolar transistor , broadband , high electron mobility transistor , harmonic , electrical engineering , frequency conversion , optoelectronics , materials science , electronic engineering , physics , engineering , telecommunications , voltage , acoustics , transistor , bipolar junction transistor
A 10.2–12.6 GHz balanced heterojunction bipolar transistor (HBT)–high electron mobility transistor (HEMT) frequency tripler is presented. A pair of common‐base/common‐emitter HBTs is used to generate in‐phase and out‐of‐phase harmonics. Two bandpass filters are utilised as matching networks to enhance the harmonic suppression. A common‐gate/common‐source HEMT active balun is employed to combine the third harmonic in‐phase and provide conversion gain. The proposed frequency tripler shows a conversion gain of 2.8 dB, a fractional bandwidth of 21.2% and a fundamental suppression higher than 47 dB.