[011] waveguide stripe direction n‐i‐p‐n heterostructure InP optical modulator | Zendy

Ogiso Y. | Zendy; Ohiso Y. | Zendy; Shibata Y. | Zendy; Kohtoku M. | Zendy

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[011] waveguide stripe direction n‐i‐p‐n heterostructure InP optical modulator

Author(s) -

Ogiso Y.,

Ohiso Y.,

Shibata Y.,

Kohtoku M.

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2014.0430

Subject(s) - heterojunction , waveguide , optical modulator , optoelectronics , materials science , electro optic modulator , optics , modulation (music) , optical communication , physics , phase modulation , phase noise , acoustics

A new n‐i‐p‐n heterostructure InP(100) optical modulator is proposed. By utilising the crystallographic orientation dependence of the electro‐optic Pockels effect and electric field direction, the device, which is formed along the [011] waveguide stripe direction, has a lower half‐wave voltage than one formed along the [01̄1] direction. The half‐wave voltage of a [01̄1] direction phase modulator was 4.8 V, whereas that of the [011] direction was 2.9 V.

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