Open Access[011] waveguide stripe direction n‐i‐p‐n heterostructure InP optical modulator
Author(s) -
Ogiso Y.,
Ohiso Y.,
Shibata Y.,
Kohtoku M.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.0430
Subject(s) - heterojunction , waveguide , optical modulator , optoelectronics , materials science , electro optic modulator , optics , modulation (music) , optical communication , physics , phase modulation , phase noise , acoustics
A new n‐i‐p‐n heterostructure InP(100) optical modulator is proposed. By utilising the crystallographic orientation dependence of the electro‐optic Pockels effect and electric field direction, the device, which is formed along the [011] waveguide stripe direction, has a lower half‐wave voltage than one formed along the [01̄1] direction. The half‐wave voltage of a [01̄1] direction phase modulator was 4.8 V, whereas that of the [011] direction was 2.9 V.