High‐performance dual‐layer channel ITO/TZO TFTs fabricated on glass substrate | Zendy

Chen Zhuofa | Zendy; Han Dedong | Zendy; Zhao Nannan | Zendy; Cong Yingying | Zendy; Wu Jing | Zendy; Dong Junchen | Zendy; Zhao Feilong | Zendy; Liu Lifeng | Zendy; Zhang Shengdong | Zendy; Zhang Xing | Zendy; Wang Yi | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

High‐performance dual‐layer channel ITO/TZO TFTs fabricated on glass substrate

Author(s) -

Chen Zhuofa,

Han Dedong,

Zhao Nannan,

Cong Yingying,

Wu Jing,

Dong Junchen,

Zhao Feilong,

Liu Lifeng,

Zhang Shengdong,

Zhang Xing,

Wang Yi

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2014.0344

Subject(s) - materials science , substrate (aquarium) , layer (electronics) , channel (broadcasting) , optoelectronics , dual (grammatical number) , dual layer , electronic engineering , composite material , computer science , telecommunications , engineering , oceanography , geology , art , literature

High‐performance fully transparent bottom‐gate type dual‐layer (ITO/TZO) channel thin‐film transistors (ITO/TZO TFTs) have been successfully fabricated on a glass substrate at low temperature (below 100°C). The results show that dual‐layer channel (ITO/TZO) TFTs, compared to the single channel TZO TFTs and ITO TFTs, exhibit better electrical properties, with a low I off of 1.5 × 10 −11 A, a high on/off ratio of 5.78 × 10 7 , a high saturation mobility μ s of 292 cm 2 /V·s, a high linear mobility μ l of 105.4 cm 2 /V·s, a steep subthreshold swing of 0.33 V/decade and a threshold voltage V th of 3.16 V. The results show that excellent device performance can be realised in ITO/TZO TFTs.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research