Open AccessHigh‐performance dual‐layer channel ITO/TZO TFTs fabricated on glass substrate
Author(s) -
Chen Zhuofa,
Han Dedong,
Zhao Nannan,
Cong Yingying,
Wu Jing,
Dong Junchen,
Zhao Feilong,
Liu Lifeng,
Zhang Shengdong,
Zhang Xing,
Wang Yi
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.0344
Subject(s) - materials science , thin film transistor , optoelectronics , threshold voltage , substrate (aquarium) , saturation (graph theory) , channel (broadcasting) , layer (electronics) , transistor , voltage , electrical engineering , nanotechnology , oceanography , engineering , geology , mathematics , combinatorics
High‐performance fully transparent bottom‐gate type dual‐layer (ITO/TZO) channel thin‐film transistors (ITO/TZO TFTs) have been successfully fabricated on a glass substrate at low temperature (below 100°C). The results show that dual‐layer channel (ITO/TZO) TFTs, compared to the single channel TZO TFTs and ITO TFTs, exhibit better electrical properties, with a low I off of 1.5 × 10 −11 A, a high on/off ratio of 5.78 × 10 7 , a high saturation mobility μ s of 292 cm 2 /V·s, a high linear mobility μ l of 105.4 cm 2 /V·s, a steep subthreshold swing of 0.33 V/decade and a threshold voltage V th of 3.16 V. The results show that excellent device performance can be realised in ITO/TZO TFTs.