Improved reliability properties of (Pb,La)(Zr,Ti)O 3  ferroelectric capacitors by thin aluminium‐doped zinc oxide buffer layer | Zendy

Takada Y. | Zendy; Tsuji T. | Zendy; Okamoto N. | Zendy; Saito T. | Zendy; Kondo K. | Zendy; Yoshimura T. | Zendy; Fujimura N. | Zendy; Higuchi K. | Zendy; Kitajima A. | Zendy

Open Access

Improved reliability properties of (Pb,La)(Zr,Ti)O 3 ferroelectric capacitors by thin aluminium‐doped zinc oxide buffer layer

Author(s) -

Takada Y.,

Tsuji T.,

Okamoto N.,

Saito T.,

Kondo K.,

Yoshimura T.,

Fujimura N.,

Higuchi K.,

Kitajima A.

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2014.0187

Subject(s) - materials science , buffer (optical fiber) , capacitor , doping , layer (electronics) , zinc , aluminium , ferroelectricity , reliability (semiconductor) , thin film , aluminum oxide , optoelectronics , composite material , metallurgy , electrical engineering , nanotechnology , dielectric , voltage , engineering , power (physics) , physics , quantum mechanics

Chemical solution deposition (CSD)‐derived ferroelectric PbLaZrTiO x (PLZT) capacitors with an aluminium‐doped zinc oxide (AZO) top electrode is fabricated. The effects of a thin conductive AZO buffer layer between the Pt bottom electrode and PLZT were investigated. The hydrogen degradation resistance of PLZT capacitors with a 10 and a 20 nm AZO buffer layer was improved up to 91 and 81%, respectively, of an initial polarisation value even after 45 min annealing in a 3% hydrogen atmosphere, from 42% of that without a buffer layer. The fatigue endurance (at 200 kV/cm (10 V) at 100 μs pulse width at 1 ms intervals) of the PLZT capacitor with a 10 nm AZO buffer layer was also improved after 10 7 cycles.

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