Open AccessImproved reliability properties of (Pb,La)(Zr,Ti)O 3 ferroelectric capacitors by thin aluminium‐doped zinc oxide buffer layer
Author(s) -
Takada Y.,
Tsuji T.,
Okamoto N.,
Saito T.,
Kondo K.,
Yoshimura T.,
Fujimura N.,
Higuchi K.,
Kitajima A.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.0187
Subject(s) - materials science , buffer (optical fiber) , capacitor , ferroelectricity , layer (electronics) , electrode , annealing (glass) , zinc , doping , aluminium , thin film , oxide , optoelectronics , analytical chemistry (journal) , composite material , metallurgy , voltage , nanotechnology , electrical engineering , chemistry , dielectric , engineering , chromatography
Chemical solution deposition (CSD)‐derived ferroelectric PbLaZrTiO x (PLZT) capacitors with an aluminium‐doped zinc oxide (AZO) top electrode is fabricated. The effects of a thin conductive AZO buffer layer between the Pt bottom electrode and PLZT were investigated. The hydrogen degradation resistance of PLZT capacitors with a 10 and a 20 nm AZO buffer layer was improved up to 91 and 81%, respectively, of an initial polarisation value even after 45 min annealing in a 3% hydrogen atmosphere, from 42% of that without a buffer layer. The fatigue endurance (at 200 kV/cm (10 V) at 100 μs pulse width at 1 ms intervals) of the PLZT capacitor with a 10 nm AZO buffer layer was also improved after 10 7 cycles.