Open AccessIn situ integrated tuner approach for load‐pull measurement of Si/SiGe:C HBT at 200 GHz
Author(s) -
Hasnaoui I.,
Pottrain A.,
Lacave T.,
Chevalier P.,
Gloria D.,
Gaquiere C.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.0186
Subject(s) - heterojunction bipolar transistor , tuner , materials science , load pull , common emitter , silicon germanium , optoelectronics , electrical impedance , bipolar junction transistor , linearity , electrical engineering , calibration , input impedance , transistor , active load , electronic engineering , amplifier , silicon , engineering , radio frequency , cmos , voltage , physics , quantum mechanics
Load impedance variations were obtained using an innovative integrated tuner at G‐band. The 200 GHz load‐pull measurements on a silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load‐pull characteristics are extracted from a 0.13 × 3 µm 2 emitter area SiGe HBT. The aim of this study is to provide a solution to avoid losses related to probes and commercial tuners. Thereby, from design to measurements, power setup architecture, calibration and performances at 200 GHz are performed in a non‐50 Ω environment. Finally, comparisons between measurements and simulation from a high current model (HICUM) show good agreement, demonstrating the capability of the measurement approach.