In situ  integrated tuner approach for load‐pull measurement of Si/SiGe:C HBT at 200 GHz | Zendy

Hasnaoui I. | Zendy; Pottrain A. | Zendy; Lacave T. | Zendy; Chevalier P. | Zendy; Gloria D. | Zendy; Gaquiere C. | Zendy

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In situ integrated tuner approach for load‐pull measurement of Si/SiGe:C HBT at 200 GHz

Author(s) -

Hasnaoui I.,

Pottrain A.,

Lacave T.,

Chevalier P.,

Gloria D.,

Gaquiere C.

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2014.0186

Subject(s) - heterojunction bipolar transistor , tuner , in situ , materials science , optoelectronics , silicon germanium , electrical engineering , electronic engineering , silicon , engineering , radio frequency , transistor , chemistry , bipolar junction transistor , voltage , organic chemistry

Load impedance variations were obtained using an innovative integrated tuner at G‐band. The 200 GHz load‐pull measurements on a silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load‐pull characteristics are extracted from a 0.13 × 3 µm 2 emitter area SiGe HBT. The aim of this study is to provide a solution to avoid losses related to probes and commercial tuners. Thereby, from design to measurements, power setup architecture, calibration and performances at 200 GHz are performed in a non‐50 Ω environment. Finally, comparisons between measurements and simulation from a high current model (HICUM) show good agreement, demonstrating the capability of the measurement approach.

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