InAs nanowire MOSFET differential active mixer on Si‐substrate | Zendy

Persson K.M. | Zendy; Berg M. | Zendy; Sjöland H. | Zendy; Lind E. | Zendy; Wernersson L.E. | Zendy

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InAs nanowire MOSFET differential active mixer on Si‐substrate

Author(s) -

Persson K.M.,

Berg M.,

Sjöland H.,

Lind E.,

Wernersson L.E.

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2013.4219

Subject(s) - mosfet , materials science , substrate (aquarium) , optoelectronics , nanowire , differential (mechanical device) , nanotechnology , electrical engineering , transistor , physics , engineering , voltage , oceanography , geology , thermodynamics

An active single balanced down‐conversion mixer is implemented using InAs nanowire metal oxide semiconductor field effect transistors (MOSFETs) as both active devices and passive resistive loads. Circuits with 6 dB low‐frequency voltage gain and a 3 dB bandwidth of 2 GHz are measured for a DC power consumption of 3.8 mW from a 1.5 V supply. The circuits are fabricated using contacts made with 12 μm‐line‐width optical lithography.

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