Open AccessInAs nanowire MOSFET differential active mixer on Si‐substrate
Author(s) -
Persson K.M.,
Berg M.,
Sjöland H.,
Lind E.,
Wernersson L.E.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.4219
Subject(s) - materials science , optoelectronics , mosfet , electronic circuit , nanowire , transistor , field effect transistor , resistive touchscreen , electrical engineering , cmos , bandwidth (computing) , biasing , voltage , engineering , telecommunications
An active single balanced down‐conversion mixer is implemented using InAs nanowire metal oxide semiconductor field effect transistors (MOSFETs) as both active devices and passive resistive loads. Circuits with 6 dB low‐frequency voltage gain and a 3 dB bandwidth of 2 GHz are measured for a DC power consumption of 3.8 mW from a 1.5 V supply. The circuits are fabricated using contacts made with 12 μm‐line‐width optical lithography.