Open AccessHighly sensitive seesaw capacitive pressure sensor based on SOI wafer
Author(s) -
Yang C.C.,
Zhao Q.,
Gao C.C.,
Liu G.D.,
Zhang Y.X.,
Cui W.P.,
Hao Y.L.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.4170
Subject(s) - capacitive sensing , pressure sensor , silicon on insulator , microelectromechanical systems , materials science , seesaw molecular geometry , wafer , sensitivity (control systems) , optoelectronics , diaphragm (acoustics) , hydrostatic test , acoustics , electronic engineering , silicon , electrical engineering , engineering , mechanical engineering , physics , composite material , neutrino , nuclear physics , loudspeaker
A novel microelectromechanical system capacitive pressure sensor with two wings, which amplify the mechanical deformation of the pressure sensing diaphragm and increase the sensor's sensitivity, is presented. This seesaw structure is available for both single and differential capacitive pressure sensors. To verify this design, a single capacitive pressure sensor is manufactured based on silicon on a insulator (SOI) wafer. The test result shows that this pressure sensor has a sensitivity of 7.75 fF/kPa.