Open AccessUltra‐wideband, high‐dynamic range, low loss GaN HEMT mixer
Author(s) -
Kang J.,
Kurdoghlian A.,
Margomenos A.,
Moyer H.P.,
Brown D.,
McGuire C.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.4135
Subject(s) - high electron mobility transistor , high dynamic range , materials science , ultra wideband , dynamic range , optoelectronics , wideband , electronic engineering , electrical engineering , transistor , engineering , voltage
An ultra‐wideband double‐balanced resistive mixer with high dynamic range (IIP3) is reported. The mixer is designed and fabricated using HRL Laboratory's GaN high electron mobility transistor (HEMT) (T2) process and it utilises a series resistor‐capacitor circuit network termination to the device gate, in order to achieve resonance‐free broadband conversion loss and high dynamic range. The measured conversion loss from 3 to 40 GHz is between 5.5 and 8.5 dB at 1 GHz intermediate frequency. Large signal testing at 15 GHz showed a 1 dB gain compression point ( P 1 dB ) of 22 dBm.