Broadband and high‐ K  passive balun using 16 sides geometry for silicon‐based RFICs | Zendy

Zhang Hua Bin | Zendy; Cai Min | Zendy; He Xiaoyong | Zendy; Wu Haijun | Zendy; Li Zhengpin | Zendy; Tang F. | Zendy

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Broadband and high‐ K passive balun using 16 sides geometry for silicon‐based RFICs

Author(s) -

Zhang Hua Bin,

Cai Min,

He Xiaoyong,

Wu Haijun,

Li Zhengpin,

Tang F.

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2013.4083

Subject(s) - balun , broadband , silicon , acoustics , materials science , geometry , electrical engineering , engineering , physics , optoelectronics , telecommunications , mathematics , antenna (radio)

A broadband and high‐ K monolithic passive balun for silicon‐based radio frequency integrated circuits (RFICs) are presented. It utilises the top level thick Cu metal and adopts a 16‐side geometry. The proposed balun is designed and fabricated with a 0.13‐μm CMOS mixed‐signal 1P6M process. The measured results show that the amplitude imbalance is < 0.2 dB and the phase imbalance is within 4° from the frequency range of 0.1–7 GHz. Compared with the typical octagonal balun, the proposed design achieves the same coupling coefficients K and attains an enhancement in the transmission efficiency S 21 within the frequency range of 0.1–20 GHz, and the consumed chip area is reduced by 3%.

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