Open AccessUsing diamond layout style to boost MOSFET frequency response of analogue IC
Author(s) -
Gimenez S.P.,
Leoni R.D.,
Renaux C.,
Flandre D.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.4038
Subject(s) - mosfet , diamond , electronic engineering , electrical engineering , materials science , computer science , optoelectronics , engineering , transistor , voltage , composite material
A way to improve the metal–oxide–semiconductor field effect transistor (MOSFET) analogue electrical performance, still little explored, is to modify their aspect form or ratio (AR) by the use of innovative layout styles. The diamond MOSFET (DM) is an example of this approach. It presents hexagonal gate geometry. This new layout structure for MOSFET induces two additional effects in comparison with the conventional (i.e. rectangular gate geometry) MOSFET (CM) counterpart, which improves the device's electrical performance: the longitudinal corner effect (LCE) and parallel association of MOSFET with different channel length effect (PAMDLE). How the diamond layout style (DLS) can significantly enhance the device's frequency response (FR) by using two different integrated circuits’ (IC) complementary metal–oxide–semiconductor (CMOS) manufacturing process technologies (bulk and silicon‐on‐insulator (SOI)) is demonstrated.