Open AccessCompact low driving voltage (<400 mV pp ) electro‐absorption modulator laterally integrated with VCSEL
Author(s) -
Dalir H.,
Takahashi Y.,
Koyama F.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.3662
Subject(s) - vertical cavity surface emitting laser , materials science , electro absorption modulator , optoelectronics , voltage , absorption (acoustics) , low voltage , integrated optics , electro optic modulator , optics , optical modulator , laser , semiconductor laser theory , electrical engineering , physics , semiconductor , phase modulation , engineering , phase noise , quantum dot laser , composite material
An ultra‐compact (8 µm long) electro‐absorption modulator is presented which is laterally integrated with a 980 nm InGaAs vertical cavity surface emitting laser incorporating a bow‐tie‐shaped oxide aperture. A low driving voltage operation below 400 mV pp for a dynamic extinction ratio of 6 dB and a large signal modulation of up to 25 Gbit/s is demonstrated. The static extinction ratio of over 6 dB can be obtained by applying an extremely low voltage of −200 mV.