Open AccessMultilayer, low‐parasitic, interconnection scheme for advanced submillimetre‐wave GaN circuits
Author(s) -
Margomenos A.,
Shinohara K.,
Regan D.C.,
Corrion A.L.,
Brown D.F.,
Tang Y.,
Butler C.,
Schmitz A.,
Robinson J.F.,
Kim S.,
McGuire C.,
Micovic M.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.3564
Subject(s) - benzocyclobutene , interconnection , materials science , optoelectronics , fabrication , electronic circuit , transistor , integrated circuit , electronic engineering , dielectric , electrical engineering , computer science , engineering , telecommunications , voltage , medicine , alternative medicine , pathology
A multilayer, low‐parasitic interconnection scheme for highly scaled GaN high electron mobility transistors is reported. The fabrication process offers three Au interconnects embedded in benzocyclobutene (BCB) dielectric, with an integrated air‐box in the active area in order to minimise the gate parasitic capacitances. With the addition of the air‐box, it is demonstrated that the performance of the BCB encapsulated device is similar to that of a non‐encapsulated device. Furthermore, by utilising the multilayer interconnection scheme a low‐loss (0.75 dB) 3 dB tandem coupler operating from 140 to 220 GHz is demonstrated.