Open AccessElectromigration‐induced degradation around electrode of GaN light‐emitting diode in water vapour
Author(s) -
Chen Hsiang,
Chang HungWei,
Shei ShihChang,
Hung ShengHao,
Sheu MengLieh
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.3483
Subject(s) - electromigration , materials science , optoelectronics , electroluminescence , diode , scanning electron microscope , leakage (economics) , optical microscope , biasing , light emitting diode , electrode , nanotechnology , electrical engineering , chemistry , voltage , composite material , engineering , layer (electronics) , economics , macroeconomics
Reverse‐bias operations for a light‐emitting diode can quickly screen the weakness of the device. Electromigration around the electrode on the lateral and vertical directions can be observed by optical microscope images, scanning electron microscope images and energy dispersive spectroscopy. The failure process caused by the electromigration can be revealed by the changes of forward‐bias and reverse‐bias electroluminescence images and the emergence of the reverse‐bias EL may be attributed to the diffusion of gold. Furthermore, the increase of the leakage current may supress the forward‐bias band to band recombination current especially near the metal contact.