Open AccessSpectroscopic photo I–V diagnostics of nitride‐based high electron mobility transistor structures on Si wafers
Author(s) -
Tong F.,
Yapabandara K.,
Yang C.W.,
Khanal M.,
Jiao C.,
Goforth M.,
Ozden B.,
Ahyi A.,
Hamilton M.,
Niu G.,
Ewoldt D.A.,
Chung G.,
Park M.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.3404
Subject(s) - high electron mobility transistor , wafer , materials science , optoelectronics , homogeneity (statistics) , transistor , chemical vapor deposition , gallium nitride , nanotechnology , electrical engineering , voltage , computer science , layer (electronics) , engineering , machine learning
A simple and novel spectroscopic photo I–V method of diagnosing the homogeneity of electrically‐active defect distribution in the large area AlGaN/GaN HEMT (high electron mobility transistor) epi‐structure grown on 6‐inch silicon wafers is reported. It is of utmost importance to produce the HEMT epi‐structure electrically homogeneous across the wafer if devices with uniform electrical characteristics are to be constructed. AlGaN/GaN HEMT epi structures were grown on a silicon substrate via metal–organic chemical vapour deposition. An array of circular semi‐transparent Ni Schottky contacts was prepared on top of the diced AlGaN/GaN HEMT structure substrates, which were selected from different locations of the 6‐inch wafer. The information of the electrical homogeneity across the wafer was elucidated from the spectral dependences of the I–V characteristics collected from different locations of the AlGaN/GaN HEMT wafer. It is successfully demonstrated that the proposed spectroscopic photo I–V measurement technique can be employed to diagnose electrical homogeneity of the electrically‐active defect distribution in the AlGaN/GaN HEMT epi structure constructed on Si with minimum sample preparation steps.