Open AccessHigh‐voltage RESURF AlGaN/GaN high electron mobility transistor with back electrode
Author(s) -
Zhao Ziqi,
Zhao Ziyu,
Luo Qian,
Du Jiangfeng
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.3366
Subject(s) - materials science , optoelectronics , transistor , high electron mobility transistor , electrode , wide bandgap semiconductor , voltage , induced high electron mobility transistor , electrical engineering , physics , engineering , quantum mechanics
A novel reduced surface field (RESURF) AlGaN/GaN high electron mobility transistor (HEMT) with back electrode is proposed. The back electrode is electrically grounded and attached to the AlN nucleation layer after the substrate is removed. The back electrode, which attracts the electric field lines at the AlGaN/GaN interface by inducing negative charges, leads to a more uniform horizontal electric field along the channel and, hence, a significant improvement in breakdown voltage. Meanwhile, there is negligible negative impact on the ON‐state resistance. Numerical simulation demonstrates a breakdown voltage of 1701 V and an ON‐state resistance of 10.45 Ω mm with a gate–drain spacing of 6 μm for the proposed device, compared to a breakdown voltage of 1118 V and an ON‐state resistance of 10.34 Ω mm for conventional RESURF AlGaN/GaN HEMT.