300 GHz InP HBT amplifier with 10 mW output power | Zendy

Yu H.G. | Zendy; Choi S.H. | Zendy; Jeon S. | Zendy; Kim M. | Zendy

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300 GHz InP HBT amplifier with 10 mW output power

Author(s) -

Yu H.G.,

Choi S.H.,

Jeon S.,

Kim M.

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2013.3288

Subject(s) - heterojunction bipolar transistor , amplifier , materials science , optoelectronics , electrical engineering , power (physics) , engineering , bipolar junction transistor , physics , voltage , transistor , cmos , quantum mechanics

A high‐power terahertz solid‐state amplifier fabricated using 0.25 μm InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective‐ground four‐way balun to combine differential amplifier chains for a total output device periphery of 40 μm. A significant amount of power of ∼10 mW is obtained at 305 GHz with better than 20 dB small‐signal gain.

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