Open Access300 GHz InP HBT amplifier with 10 mW output power
Author(s) -
Yu H.G.,
Choi S.H.,
Jeon S.,
Kim M.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.3288
Subject(s) - heterojunction bipolar transistor , amplifier , balun , materials science , electrical engineering , direct coupled amplifier , power added efficiency , optoelectronics , linear amplifier , fet amplifier , bipolar junction transistor , rf power amplifier , transistor , power (physics) , operational amplifier , engineering , physics , voltage , cmos , quantum mechanics , antenna (radio)
A high‐power terahertz solid‐state amplifier fabricated using 0.25 μm InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective‐ground four‐way balun to combine differential amplifier chains for a total output device periphery of 40 μm. A significant amount of power of ∼10 mW is obtained at 305 GHz with better than 20 dB small‐signal gain.