Open AccessComparative modelling of differential through‐silicon vias up to 40 GHz
Author(s) -
Lu KuanChung,
Horng TzyySheng
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.3281
Subject(s) - silicon , differential (mechanical device) , materials science , electronic engineering , optoelectronics , electrical engineering , engineering , aerospace engineering
The three‐dimensional integrated circuit has attracted considerable attention because of the evolving functions of today's integrated circuit products and a continuing demand for reduced power consumption and miniature chip size. Through‐silicon vias (TSVs) provide a vertical interconnection between stacked dies; they are much shorter and have a denser connectivity than the hybrid horizontal and bondwire interconnects in conventional use. Differential interconnects are more commonly used in high‐speed digital circuits rather than single‐ended ones because of their higher immunity to common‐mode noise. Accordingly, presented is a scalable physical model for differential TSVs. Mixed‐mode S ‐parameters were generated using the established model and the electrical performance of a GSSG‐type differential TSV was compared with that of a GSGSG‐type differential TSV. Furthermore, four‐port S ‐parameters were measured up to 40 GHz to validate the modelled results.