Open AccessSingle‐chip InGaN green light‐emitting diodes with 3 W optical output power
Author(s) -
Wang Wei,
Cai Yong,
Huang Juan Hong,
Huang Wei,
Li Haiou,
Lin Xin,
Zhou Ximing,
Zhang Baosun
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.2980
Subject(s) - optoelectronics , materials science , diode , light emitting diode , chip , wafer , power (physics) , optical power , quantum efficiency , voltage , green light , electrical engineering , optics , physics , engineering , laser , blue light , quantum mechanics
The characteristics of a high‐power single‐chip green light‐emitting diode (LED) operating with a >40 W input power are reported. The single‐chip large area LED chip, which consists of 24 stages, was fabricated by using commercial wafers with chip dimensions of 6.5 × 5 mm 2 . The electrical and optical characteristics of the LED were measured up to a 500 mA injection current under direct operation conditions. Optical output power and forward voltage at 500 mA were obtained to be 3 W and 83 V, respectively, which demonstrates an external quantum efficiency (EQE) of 10.4% with a 41.5 W input power.