Single‐chip InGaN green light‐emitting diodes with 3 W optical output power | Zendy

Wang Wei | Zendy; Cai Yong | Zendy; Huang Juan Hong | Zendy; Huang Wei | Zendy; Li Haiou | Zendy; Lin Xin | Zendy; Zhou Ximing | Zendy; Zhang Baosun | Zendy

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Single‐chip InGaN green light‐emitting diodes with 3 W optical output power

Author(s) -

Wang Wei,

Cai Yong,

Huang Juan Hong,

Huang Wei,

Li Haiou,

Lin Xin,

Zhou Ximing,

Zhang Baosun

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2013.2980

Subject(s) - light emitting diode , optoelectronics , materials science , diode , green light , chip , power (physics) , optical power , optics , electrical engineering , physics , blue light , laser , engineering , quantum mechanics

The characteristics of a high‐power single‐chip green light‐emitting diode (LED) operating with a >40 W input power are reported. The single‐chip large area LED chip, which consists of 24 stages, was fabricated by using commercial wafers with chip dimensions of 6.5 × 5 mm 2 . The electrical and optical characteristics of the LED were measured up to a 500 mA injection current under direct operation conditions. Optical output power and forward voltage at 500 mA were obtained to be 3 W and 83 V, respectively, which demonstrates an external quantum efficiency (EQE) of 10.4% with a 41.5 W input power.

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