Open AccessHigh quantum efficiency deep ultraviolet 4H‐SiC photodetectors
Author(s) -
Sampath A.V.,
Rodak L.E.,
Chen Y.,
Zhou Q.,
Campbell J.C.,
Shen H.,
Wraback M.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.2889
Subject(s) - photodetector , optoelectronics , ultraviolet , quantum efficiency , materials science , quantum , optics , engineering physics , physics , quantum mechanics
4H‐SiC p ‐ n − ‐metal photodetectors are demonstrated having high external quantum efficiency >∼40% in the deep ultraviolet spectrum between 200 and 235 nm. This improvement is attributed to the improved collection of carriers generated by deep ultraviolet photons through absorption in the depletion region of the detector.