AlN/AlGaN HEMTs on AlN substrate for stable high‐temperature operation | Zendy

Yafune N. | Zendy; Hashimoto S. | Zendy; Akita K. | Zendy; Yamamoto Y. | Zendy; Tokuda H. | Zendy; Kuzuhara M. | Zendy

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AlN/AlGaN HEMTs on AlN substrate for stable high‐temperature operation

Author(s) -

Yafune N.,

Hashimoto S.,

Akita K.,

Yamamoto Y.,

Tokuda H.,

Kuzuhara M.

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2013.2846

Subject(s) - ohmic contact , materials science , high electron mobility transistor , optoelectronics , substrate (aquarium) , transistor , stack (abstract data type) , layer (electronics) , voltage , electrical engineering , composite material , geology , engineering , oceanography , computer science , programming language

An AlN/AlGaN high‐electron‐mobility transistor (HEMT) fabricated on a free‐standing AlN substrate is demonstrated. A metal stack, composed of Zr/Al/Mo/Au, was found to show low contact resistivity for source and drain ohmic contacts. The fabricated AlN/AlGaN HEMT exhibited a maximum drain current of 38 mA/mm with a threshold voltage of −3.4 V. Negligible drain current degradation was observed at temperatures from 300 to 573 K, demonstrating that an AlN/AlGaN approach on an AlN substrate is promising for stable high‐temperature operation.

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