Open AccessAlN/AlGaN HEMTs on AlN substrate for stable high‐temperature operation
Author(s) -
Yafune N.,
Hashimoto S.,
Akita K.,
Yamamoto Y.,
Tokuda H.,
Kuzuhara M.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.2846
Subject(s) - ohmic contact , materials science , high electron mobility transistor , optoelectronics , substrate (aquarium) , transistor , stack (abstract data type) , layer (electronics) , voltage , electrical engineering , composite material , geology , engineering , oceanography , computer science , programming language
An AlN/AlGaN high‐electron‐mobility transistor (HEMT) fabricated on a free‐standing AlN substrate is demonstrated. A metal stack, composed of Zr/Al/Mo/Au, was found to show low contact resistivity for source and drain ohmic contacts. The fabricated AlN/AlGaN HEMT exhibited a maximum drain current of 38 mA/mm with a threshold voltage of −3.4 V. Negligible drain current degradation was observed at temperatures from 300 to 573 K, demonstrating that an AlN/AlGaN approach on an AlN substrate is promising for stable high‐temperature operation.