Open Access75 nm T‐shaped gate for In 0.17 Al 0.83 N/GaN HEMTs with minimal short‐channel effect
Author(s) -
Geum D.M.,
Shin S.H.,
Kim M.S.,
Jang J.H.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.2769
Subject(s) - materials science , cutoff frequency , optoelectronics , gallium nitride , transistor , oscillation (cell signaling) , barrier layer , schottky diode , schottky barrier , nitride , active layer , equivalent series resistance , layer (electronics) , electrical engineering , diode , nanotechnology , thin film transistor , voltage , chemistry , engineering , biochemistry
Lattice‐matched InAlN/gallium nitride high electron‐mobility transistors with a 6 nm‐thick InAlN barrier layer were fabricated and characterised. By introducing a very thin InAlN Schottky layer, the short‐channel effect could be minimised. The devices with a gate length of 75 nm exhibited output resistance as high as 56.9 Ω mm together with a drain‐induced barrier lowering as low as 63 mV/V. The devices also demonstrated excellent high‐frequency characteristics such as a unity current gain cutoff frequency ( f T ) of 170 GHz and a maximum oscillation frequency ( f max ) of 210 GHz.