Open AccessInAs/AlSb quantum cascade lasers operating near 20 µm
Author(s) -
Bahriz M.,
Lollia G.,
Laffaille P.,
Baranov A.N.,
Teissier R.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.2412
Subject(s) - cascade , laser , optoelectronics , materials science , substrate (aquarium) , quantum well , quantum dot laser , semiconductor laser theory , waveguide , current density , optics , physics , semiconductor , chemistry , chromatography , quantum mechanics , oceanography , geology
InAs‐based quantum cascade lasers (QCLs) operating near 20 µm are demonstrated. A double metal waveguide fabricated by transfer of the laser active region onto a host InAs substrate has been employed in these devices. The threshold current density of 1.6 kA/cm 2 at 80 K is lower than that of InP‐based QCLs emitting in the same spectral region. The lasers operated in pulsed mode up to 170 K.