InAs/AlSb quantum cascade lasers operating near 20 µm | Zendy

Bahriz M. | Zendy; Lollia G. | Zendy; Laffaille P. | Zendy; Baranov A.N. | Zendy; Teissier R. | Zendy

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InAs/AlSb quantum cascade lasers operating near 20 µm

Author(s) -

Bahriz M.,

Lollia G.,

Laffaille P.,

Baranov A.N.,

Teissier R.

Publication year - 2013

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2013.2412

Subject(s) - cascade , optoelectronics , laser , quantum well , materials science , semiconductor laser theory , gallium arsenide , quantum , optics , physics , semiconductor , quantum mechanics , chemistry , chromatography

InAs‐based quantum cascade lasers (QCLs) operating near 20 µm are demonstrated. A double metal waveguide fabricated by transfer of the laser active region onto a host InAs substrate has been employed in these devices. The threshold current density of 1.6 kA/cm 2 at 80 K is lower than that of InP‐based QCLs emitting in the same spectral region. The lasers operated in pulsed mode up to 170 K.

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