Tuning power spectrum of semiconductor and intracavity‐etalon based modelocked laser via detuning | Zendy

Seo D.S. | Zendy; Leaird D.E. | Zendy; Weiner A.M. | Zendy

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Tuning power spectrum of semiconductor and intracavity‐etalon based modelocked laser via detuning

Author(s) -

Seo D.S.,

Leaird D.E.,

Weiner A.M.

Publication year - 2013

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2013.2135

Subject(s) - fabry–pérot interferometer , semiconductor , semiconductor laser theory , laser , optoelectronics , optics , materials science , power (physics) , physics , quantum mechanics

A report is presented on the tuning of the frequency envelope of a broadband comb source generated from a semiconductor‐based modelocked ring laser with an intracavity high finesse Fabry‐Pérot etalon (FPE). By deliberately adjusting the matching condition between FPE transmission peaks and lasing optical comb frequencies, ∼ 7 nm tuning of more than 200 optical frequency comb lines spaced by 10 GHz is achieved.

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