Open AccessTuning power spectrum of semiconductor and intracavity‐etalon based modelocked laser via detuning
Author(s) -
Seo D.S.,
Leaird D.E.,
Weiner A.M.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.2135
Subject(s) - fabry–pérot interferometer , finesse , optics , laser , lasing threshold , semiconductor laser theory , materials science , optoelectronics , broadband , semiconductor , frequency comb , envelope (radar) , physics , telecommunications , radar , computer science
A report is presented on the tuning of the frequency envelope of a broadband comb source generated from a semiconductor‐based modelocked ring laser with an intracavity high finesse Fabry‐Pérot etalon (FPE). By deliberately adjusting the matching condition between FPE transmission peaks and lasing optical comb frequencies, ∼ 7 nm tuning of more than 200 optical frequency comb lines spaced by 10 GHz is achieved.