Open AccessStudy of graphene field‐effect transistors under electrostatic discharge stresses
Author(s) -
Dong Shurong,
Zhong Lei,
Zeng Jie,
Guo Wei,
Li Hongwei,
Wang Jun,
Guo Zhiguang,
Liou Juin J.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.1865
Subject(s) - snapback , electrostatic discharge , materials science , graphene , transistor , voltage , optoelectronics , electric field , transmission line , field effect transistor , electrical engineering , nanotechnology , engineering , physics , quantum mechanics
Graphene field‐effect transistors (GFETs) are characterised for the first time under electrostatic discharge stresses. The GFETs are measured from the transmission line pulsing (TLP) tester and very fast TLP (VFTLP) tester. The turn‐on behaviour influenced by back gate voltage is investigated. The I–V curve of the GFETs shows no characteristic of snapback from TLP or VFTLP measurement.