Study of graphene field‐effect transistors under electrostatic discharge stresses | Zendy

Dong Shurong | Zendy; Zhong Lei | Zendy; Zeng Jie | Zendy; Guo Wei | Zendy; Li Hongwei | Zendy; Wang Jun | Zendy; Guo Zhiguang | Zendy; Liou Juin J. | Zendy

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Study of graphene field‐effect transistors under electrostatic discharge stresses

Author(s) -

Dong Shurong,

Zhong Lei,

Zeng Jie,

Guo Wei,

Li Hongwei,

Wang Jun,

Guo Zhiguang,

Liou Juin J.

Publication year - 2013

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2013.1865

Subject(s) - electrostatic discharge , materials science , field effect transistor , graphene , optoelectronics , transistor , electrical engineering , nanotechnology , voltage , engineering

Graphene field‐effect transistors (GFETs) are characterised for the first time under electrostatic discharge stresses. The GFETs are measured from the transmission line pulsing (TLP) tester and very fast TLP (VFTLP) tester. The turn‐on behaviour influenced by back gate voltage is investigated. The I–V curve of the GFETs shows no characteristic of snapback from TLP or VFTLP measurement.

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