Open AccessSimple scheme to increase hold voltage for silicon‐controlled rectifier
Author(s) -
Hung ChungYu,
Kao TzuCheng,
Lee JianHsing,
Gong Jeng,
Huang TsungYi,
Su HungDer,
Chang KuoCheng,
Huang ChihFang,
Lo KuoHsuan
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.1853
Subject(s) - rectifier (neural networks) , common emitter , voltage , anode , materials science , simple (philosophy) , silicon , peak inverse voltage , diffusion , thyristor , optoelectronics , electrical engineering , doping , electronic engineering , voltage regulator , computer science , engineering , voltage optimisation , electrode , physics , philosophy , stochastic neural network , epistemology , machine learning , recurrent neural network , artificial neural network , quantum mechanics , thermodynamics
A simple scheme is proposed to increase the hold voltage and not change the original trigger voltage of a silicon‐controlled rectifier (SCR) to enhance its latch‐up immunity without changing the device dimensions. It is found that using the lightly doped P‐diffusion instead of the highly doped P + diffusion as the P emitter of the anode can increase the hold voltage of an SCR.