Open AccessVerification of theoretical model for collector current in SiGe‐based heterojunction bipolar transistors
Author(s) -
Hasanah L.,
Noor F.A.,
Jung C.U.,
Khairurrijal K.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.1839
Subject(s) - bipolar junction transistor , heterojunction , heterojunction bipolar transistor , materials science , heterostructure emitter bipolar transistor , optoelectronics , current injection technique , current (fluid) , electronic engineering , transistor , electrical engineering , engineering physics , engineering , voltage
The theoretical collector current model for SiGe‐based heterojunction bipolar transistors under parallel–perpendicular kinetic energy coupling and anisotropic masses was validated. Verification was performed by comparison to Monte Carlo (MC) calculations and experimental data obtained from previous publications. Collector current against base‐emitter voltage obtained by the present model is comparable to that calculated by the MC method. The measured collector currents as a function of base‐collector voltage agreed well with the calculated currents for base‐emitter voltages ranging from 0.3 to 0.6 V.