Open AccessResearch on temperature characteristic of thermoelectric microwave power sensors based on GaAs MMIC technology
Author(s) -
Wang DeBo,
Liao Xiaoping
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.1769
Subject(s) - monolithic microwave integrated circuit , microwave , thermoelectric effect , microelectromechanical systems , power (physics) , seebeck coefficient , materials science , electrical engineering , thermocouple , fabrication , microwave power , temperature measurement , thermopile , optoelectronics , electronic engineering , engineering , telecommunications , optics , physics , electrical resistivity and conductivity , medicine , amplifier , alternative medicine , cmos , pathology , quantum mechanics , infrared , thermodynamics
The effect of temperature on thermoelectric microwave power sensors is researched in order to extend its application field. The fabrication of this microwave power sensor is divided into a front side and a back side processing using GaAs MMIC process and MEMS technology. The measurement results show that the temperature has a significant effect on the performance of thermoelectric microwave power sensors. The obtained temperature coefficient is about 0.488 mV/(W · K), which has an important reference value for the thermoelectric microwave power sensors. The reason is that the accuracy of microwave power measurement will be realised as long as the environment temperature is tracked.