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28 GHz MMIC resonant tunnelling diode oscillator of around 1mW output power
Author(s) -
Wang J.,
Wang L.,
Li C.,
Romeira B.,
Wasige E.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.1583
Subject(s) - dbc , monolithic microwave integrated circuit , phase noise , electrical engineering , offset (computer science) , resonant tunneling diode , quantum tunnelling , microwave , diode , dbm , power (physics) , optoelectronics , voltage controlled oscillator , local oscillator , engineering , materials science , physics , telecommunications , voltage , computer science , optics , laser , amplifier , cmos , quantum well , quantum mechanics , programming language
Presented is a monolithic microwave integrated circuit (MMIC) resonant tunnelling diode (RTD) oscillator that employs two In 0.53 Ga 0.47 As/AlAs RTDs (5 × 5 µm 2 ) in parallel. The oscillator works at 28.7 GHz with −0.7 dBm output power. The phase noise was −95 dBc/Hz at 100 kHz and −114 dBc/Hz at 1 MHz offset. This reported work demonstrates the potential of RTD oscillators in achieving high output power at high frequencies by utilising suitable power maximising and combining techniques.

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