Open AccessSurface‐activating‐bonding‐based low‐resistance Si/III‐V junctions
Author(s) -
Liang J.,
Nishida S.,
Morimoto M.,
Shigekawa N.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.1553
Subject(s) - materials science , optoelectronics , surface (topology) , engineering physics , electrical engineering , composite material , engineering , mathematics , geometry
The electrical properties of pn junctions, with various semiconductor materials with different doping concentrations fabricated by using surface‐activated‐bonding (SAB), were investigated by measuring their current‐voltage ( I‐V ) characteristics. The I‐V characteristics of p + ‐GaAs/ n ++ ‐Si, p + ‐GaAs/ n + ‐Si, p + ‐Si/ n + ‐Si, p ++ ‐Si/ n + ‐InGaP, and p + ‐Si/ n + ‐InGaP junctions showed ohmic‐like properties. The interface resistance and the resultant electrical loss decreased with increasing impurity concentration at the interface. These results demonstrate the significance of SAB for fabricating tandem solar cells.