Open AccessPiezoresistive pressure sensors fabricated by surface micromachining process compatible with CMOS process
Author(s) -
Yu Huiyang,
Qin Ming
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.1396
Subject(s) - piezoresistive effect , surface micromachining , materials science , process (computing) , bulk micromachining , cmos , optoelectronics , electronic engineering , pressure sensor , mechanical engineering , engineering , fabrication , computer science , medicine , alternative medicine , pathology , operating system
A piezoresistive pressure sensor has been fabricated with a newly proposed fabrication process, which is quite suitable for fabricating MEMS devices. The fabricated pressure sensors are wire‐bonded and have been tested under the pressure range from 100–1012hPa. The results show that the output voltage increases with the applied pressure. For the structures with membrane length of 800 and 900 µm, the output voltage is linear to the pressure applied and the sensitivity of the sensor is about 0.75 and 0.877mV/hPa. The test results also show that, in order to get a linear output, the membrane length should be less than 1000 µm.