Open AccessFeasibility of coaxial through silicon via 3D integration
Author(s) -
Adamshick S.,
Coolbaugh D.,
Liehr M.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.1165
Subject(s) - coaxial , through silicon via , cmos , fabrication , electronic engineering , coaxial cable , silicon , materials science , process (computing) , electrical engineering , engineering , computer science , optoelectronics , cable gland , medicine , alternative medicine , pathology , operating system
Three‐dimensional (3D) integration of coaxial through silicon vias (TSVs) is becoming an area of considerable interest owing to their superior high‐frequency performance in comparison to standard 3D interconnects. However, in contrast to standard TSVs, coaxial TSVs require more processing to integrate the ground shield surrounding the copper via. Cost‐effective methods for implementing coaxial TSV technology with CMOS processing are challenging. Demonstrated is a low‐cost fabrication method for integrating coaxial TSVs within the confines of a standard CMOS process is demonstrated.