Open AccessAnalysis of parasitic effects in triple‐well CMOS SPDT switch
Author(s) -
Sun Pinping,
Liu Peng
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.0945
Subject(s) - cmos , isolation (microbiology) , electronic engineering , crossover switch , electrical engineering , diode , rf switch , engineering , optical switch , radio frequency , microbiology and biotechnology , biology
A comparison between a conventional body floating single pole double throw (SPDT) CMOS switch design and a proposed switched gate floating CMOS SPDT switch design based on an analysis of parasitic effects is presented. In standard CMOS technology, the switched gate floating switch is analytically proved to have higher isolation owing to the alleviation of parasitic diode and substrate coupling effects in the operation state. The proposed switch maintains a similar insertion loss as conventional swithches while achieving an average of 6 dB isolation improvement over the operating frequency, which agrees well with the presented analysis.