Open AccessHigh field‐effect mobility amorphous InSnZnO thin‐film transistors with low carrier concentration and oxygen vacancy
Author(s) -
Jang K.,
Raja J.,
Kim J.,
Lee Y.,
Kim D.,
Yi J.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.0812
Subject(s) - thin film transistor , amorphous solid , materials science , oxygen , subthreshold swing , optoelectronics , transistor , vacancy defect , electron mobility , analytical chemistry (journal) , threshold voltage , nanotechnology , electrical engineering , chemistry , voltage , crystallography , layer (electronics) , chromatography , organic chemistry , engineering
The influence of carrier concentration and oxygen vacancy on the performance of amorphous‐indium–tin–zinc‐oxide (a‐ITZO) thin‐film transistors (TFTs) is reported. The ITZO TFT with lowest carrier concentration and oxygen vacancy has a high field‐effect mobility ( μ FE ) of 37.2 cm 2 /V•s, a high on/off current ratio ( I ON / I OFF ) of ∼1 × 10 7 and a low subthreshold swing (SS) of 0.93 V/decade. By increasing the carrier concentration and oxygen vacancy, μ FE , I ON/OFF and SS were surprisingly degraded to 14.4 cm 2 /V•s, ∼4 × 10 4 and 4.01 V/decade, respectively. By controlling the carrier concentration and oxygen vacancies of ITZO bulk, improvement of the performance in TFT devices can be achieved. The proposed high μ FE of 37.2 cm 2 /V•s is enough for the application of next‐generation displays requiring ultra‐high resolution and high‐frame‐rate displays.