Open AccessAchieving reproducibility needed for manufacturing semiconductor tunnel devices
Author(s) -
Shao C.,
Sexton J.,
Missous M.,
Kelly M.J.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.0782
Subject(s) - reproducibility , quantum tunnelling , wafer , semiconductor , semiconductor device fabrication , semiconductor device , optoelectronics , microwave , heterojunction , materials science , detector , engineering physics , electronic engineering , layer (electronics) , electrical engineering , engineering , nanotechnology , telecommunications , chemistry , chromatography
Fifty years after tunnelling through semiconductor heterojunctions was originally investigated, the present authors are the first to demonstrate the required reproducibility, in wafer, between wafers in a given growth run, and from run to run, of the electrical properties required for manufacturing a microwave and millimetre‐wave detector based on electron tunnelling through a thin semiconductor tunnel barrier layer.