Achieving reproducibility needed for manufacturing semiconductor tunnel devices | Zendy

Shao C. | Zendy; Sexton J. | Zendy; Missous M. | Zendy; Kelly M.J. | Zendy

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Achieving reproducibility needed for manufacturing semiconductor tunnel devices

Author(s) -

Shao C.,

Sexton J.,

Missous M.,

Kelly M.J.

Publication year - 2013

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2013.0782

Subject(s) - reproducibility , semiconductor device fabrication , semiconductor device , semiconductor , reliability engineering , materials science , engineering , computer science , engineering physics , optoelectronics , nanotechnology , mathematics , layer (electronics) , wafer , statistics

Fifty years after tunnelling through semiconductor heterojunctions was originally investigated, the present authors are the first to demonstrate the required reproducibility, in wafer, between wafers in a given growth run, and from run to run, of the electrical properties required for manufacturing a microwave and millimetre‐wave detector based on electron tunnelling through a thin semiconductor tunnel barrier layer.

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