Open Access1.9 µm hybrid silicon/III‐V semiconductor laser
Author(s) -
Dong P.,
Hu T.C.,
Zhang L.,
Dinu M.,
Kopf R.,
Tate A.,
Buhl L.,
Neilson D.T.,
Luo X.,
Liow T.Y.,
Lo G.Q.,
Chen Y.K.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.0674
Subject(s) - wafer , silicon , materials science , silicon on insulator , optoelectronics , laser , hybrid silicon laser , substrate (aquarium) , quantum well , semiconductor , wafer bonding , semiconductor laser theory , optics , oceanography , physics , geology
A 1.9 µm hybrid silicon/III‐V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III‐V wafer is bonded to a silicon‐on‐insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C is demonstrated.