1.9 µm hybrid silicon/III‐V semiconductor laser | Zendy

Dong P. | Zendy; Hu T.C. | Zendy; Zhang L. | Zendy; Dinu M. | Zendy; Kopf R. | Zendy; Tate A. | Zendy; Buhl L. | Zendy; Neilson D.T. | Zendy; Luo X. | Zendy; Liow T.Y. | Zendy; Lo G.Q. | Zendy; Chen Y.K. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

1.9 µm hybrid silicon/III‐V semiconductor laser

Author(s) -

Dong P.,

Hu T.C.,

Zhang L.,

Dinu M.,

Kopf R.,

Tate A.,

Buhl L.,

Neilson D.T.,

Luo X.,

Liow T.Y.,

Lo G.Q.,

Chen Y.K.

Publication year - 2013

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2013.0674

Subject(s) - silicon , semiconductor , materials science , optoelectronics , semiconductor laser theory , hybrid silicon laser , laser , semiconductor device , electronic engineering , optics , engineering , physics , nanotechnology , layer (electronics)

A 1.9 µm hybrid silicon/III‐V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III‐V wafer is bonded to a silicon‐on‐insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C is demonstrated.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research