Open AccessDesign of four‐state inverter using quantum dot gate‐quantum dot channel field effect transistor
Author(s) -
Karmakar S.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.0570
Subject(s) - quantum dot , inverter , transistor , field effect transistor , optoelectronics , channel (broadcasting) , logic gate , physics , state (computer science) , electronic engineering , electrical engineering , computer science , quantum mechanics , engineering , voltage , algorithm
Quaternary logic can be implemented using quantum dot gate‐quantum dot channel field effect transistors (QDG‐QDCFETs) which produce four states in their transfer characteristics. A circuit model is used to simulate a four‐state state inverter which is the basic building block of any multi‐valued logic (MVL) circuit design. A basic problem of MVL implementation is the noise margin. The stable nature of the transfer characteristics of the QDG‐QDCFET can make them a promising circuit element in future MVL circuit design. Comparison of fabricated device characteristics and the model data is shown.