Open AccessTechnology projections of III–V devices down to 11 nm: importance of electrostatics and series resistance
Author(s) -
Oh S.,
Wong H.S.P.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.0505
Subject(s) - series (stratigraphy) , equivalent series resistance , electrostatics , electrical engineering , electronic engineering , engineering physics , physics , materials science , computer science , engineering , voltage , quantum mechanics , biology , paleontology
As device dimensions become increasingly challenging to scale down, the high‐mobility channel solution is gaining more interest. However, will good carrier transport alone guarantee the continuation of higher drive current at shorter dimensions and lower power supply? The technology scaling of FO4 delay and energy delay product of III–V/Ge logic for beyond‐22‐nm technologies was investigated. The circuit performance estimation was projected down to 11 nm technology by using a physics‐based compact model developed for III–V field effect transistors. The analysis shows that the realisation of good electrostatics and low series resistance is crucial for the scalability of high mobility channel devices.