Observation of spontaneous Raman scattering in hydrogenated amorphous silicon wire waveguide at 1.55 µm | Zendy

Tanizawa K. | Zendy; Suda S. | Zendy; Sakakibara Y. | Zendy; Kamei T. | Zendy; Takei R. | Zendy; Kawashima H. | Zendy; Namiki S. | Zendy; Mori M. | Zendy; Ishikawa H. | Zendy

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Observation of spontaneous Raman scattering in hydrogenated amorphous silicon wire waveguide at 1.55 µm

Author(s) -

Tanizawa K.,

Suda S.,

Sakakibara Y.,

Kamei T.,

Takei R.,

Kawashima H.,

Namiki S.,

Mori M.,

Ishikawa H.

Publication year - 2013

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2013.0461

Subject(s) - materials science , amorphous silicon , raman scattering , silicon , scattering , optoelectronics , raman spectroscopy , amorphous solid , waveguide , optics , crystalline silicon , chemistry , crystallography , physics

Reported is the measurement of spontaneous Raman scattering in a 13 mm‐long hydrogenated amorphous silicon wire waveguide with ultrafast carrier decay time. Broad Raman emission with a peak wavelength of 1.55 µm was observed for a pump wavelength of 1.44 µm. The Raman frequency shift is 14.3 THz, and Raman gain coefficient is estimated to be 0.15 W − 1 cm − 1 .

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