Open AccessObservation of spontaneous Raman scattering in hydrogenated amorphous silicon wire waveguide at 1.55 µm
Author(s) -
Tanizawa K.,
Suda S.,
Sakakibara Y.,
Kamei T.,
Takei R.,
Kawashima H.,
Namiki S.,
Mori M.,
Ishikawa H.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.0461
Subject(s) - raman scattering , raman spectroscopy , materials science , amorphous silicon , wavelength , silicon , waveguide , amorphous solid , optics , ultrashort pulse , terahertz radiation , coherent anti stokes raman spectroscopy , optoelectronics , laser , crystalline silicon , chemistry , physics , crystallography
Reported is the measurement of spontaneous Raman scattering in a 13 mm‐long hydrogenated amorphous silicon wire waveguide with ultrafast carrier decay time. Broad Raman emission with a peak wavelength of 1.55 µm was observed for a pump wavelength of 1.44 µm. The Raman frequency shift is 14.3 THz, and Raman gain coefficient is estimated to be 0.15 W − 1 cm − 1 .