Open AccessPotential of MISFET with HfN gate dielectric formed by ECR plasma sputtering
Author(s) -
Han H.S.,
Han D.H.,
Ohmi S.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.0319
Subject(s) - misfet , materials science , gate dielectric , electron cyclotron resonance , dielectric , optoelectronics , sputtering , plasma , sputter deposition , analytical chemistry (journal) , electrical engineering , voltage , transistor , field effect transistor , thin film , chemistry , nanotechnology , physics , quantum mechanics , chromatography , engineering
A report is presented on a Al/HfN/p‐Si(100) n‐MISFET with excellent electrical properties that inserts a 4 nm‐thick HfN gate dielectric with equivalent oxide thickness of 0.7 nm formed by electron‐cyclotron‐resonance plasma sputtering. The threshold voltage (V th ) of the device was 0.05 V. The on/off ratio and subthreshold swing at W/L = 90 µm/5 µm were ∼10 3 and 200 mV/dec., respectively. In particular, the n‐MISFET exhibits I DS,sat = 20.2 µA/μm and g m = 20.5 mS/mm. This is the first report of n‐MISFET characteristics with HfN gate dielectric.