3–10 GHz self‐biased resistive‐feedback LNA with inductive source degeneration | Zendy

Feng C. | Zendy; Yu X. P. | Zendy; Lu Z. H. | Zendy; Lim W. M. | Zendy; Sui W. Q. | Zendy

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3–10 GHz self‐biased resistive‐feedback LNA with inductive source degeneration

Author(s) -

Feng C.,

Yu X. P.,

Lu Z. H.,

Lim W. M.,

Sui W. Q.

Publication year - 2013

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2012.4472

Subject(s) - resistive touchscreen , degeneration (medical) , optoelectronics , electrical engineering , radio frequency , electronic engineering , physics , materials science , acoustics , engineering , medicine , pathology

A 3–10 GHz self‐biased low‐noise amplifier (LNA) implemented in Global Foundries 65 nm CMOS process is presented. A novel input‐matching network employing the resistive feedback and inductive source degeneration techniques is proposed to achieve the wideband matching as well as low noise figure. The LNA exhibits a power gain of 17 ± 1 dB over 3–10 GHz with noise figure ranging from 3.5 to 4.3 dB. The fabricated LNA occupies an area of 0.15 mm 2 and draws 12 mA from 1.2 V power supply.

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