Open Access3–10 GHz self‐biased resistive‐feedback LNA with inductive source degeneration
Author(s) -
Feng C.,
Yu X. P.,
Lu Z. H.,
Lim W. M.,
Sui W. Q.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2012.4472
Subject(s) - resistive touchscreen , degeneration (medical) , optoelectronics , electrical engineering , radio frequency , electronic engineering , physics , materials science , acoustics , engineering , medicine , pathology
A 3–10 GHz self‐biased low‐noise amplifier (LNA) implemented in Global Foundries 65 nm CMOS process is presented. A novel input‐matching network employing the resistive feedback and inductive source degeneration techniques is proposed to achieve the wideband matching as well as low noise figure. The LNA exhibits a power gain of 17 ± 1 dB over 3–10 GHz with noise figure ranging from 3.5 to 4.3 dB. The fabricated LNA occupies an area of 0.15 mm 2 and draws 12 mA from 1.2 V power supply.