Open AccessLocalised back contact to ONO passivated c‐Si solar cells using laser fired contact method
Author(s) -
Choi P.H.,
Baek D.H.,
Kim H.J.,
Kim K.S.,
Park H.S.,
Lee J.H.,
Yi J.S.,
Choi B.D.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2012.4465
Subject(s) - materials science , laser , optoelectronics , solar cell , optics , engineering physics , engineering , physics
The localised back contact method for SiO 2 /SiN x /SiO 2 (ONO) back surface passivated crystalline silicon solar cells has been investigated using a 1064 nm Nd:YAG laser. From the quasi‐steady‐state‐photoconductance measurements, feasible passivation properties of effective carrier lifetime (τ eff ), back surface recombination velocity (S eff ) and diffusion length (L D ) with the ONO passivated layer rather than with the SiN x single layer have been confirmed. Localised point back contacts were formed varying with dot diameter and dot spacing and then the cell performance was characterised from solar simulator measurements. It was confirmed that the cell performance is closely related to the back contact area which is determined by dot diameter and spacing, and dot spacing is the more crucial factor to determine the cell performance than diameter variations.