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3.88 dB NF 60 GHz CMOS UWB LNA with small group‐delay‐variation
Author(s) -
Lee J.H.,
Lin Y.S.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2012.4455
Subject(s) - cmos , group delay and phase delay , electronic engineering , variation (astronomy) , electrical engineering , group (periodic table) , telecommunications , engineering , physics , bandwidth (computing) , quantum mechanics , astrophysics
A low power and low noise figure (NF) 60 GHz low‐noise amplifier (LNA) with excellent phase linearity using standard 90 nm CMOS technology is reported. The LNA comprises a common‐source (CS) stage followed by a cascode stage and a CS stage. The LNA consumes 14.1 mW, achieving S 11 better than − 10 dB for the frequencies 55.1–59.5 GHz, S 22 better than − 10 dB for the frequencies 55.1–59.4 GHz, and group delay variation smaller than ± 13.25 ps for the frequencies 50.4–63 GHz. Additionally, high and flat S 21 of 9.9 ± 1.5 dB is achieved for the frequencies 50.4–62.9 GHz, which means the corresponding 3 dB bandwidth is 12.5 GHz. Furthermore, the LNA achieves a minimum NF of 3.88 dB at 55.5 GHz and an NF of 4.73 ± 0.85 dB for the frequencies 50–63.5 GHz, one of the best NF results ever reported for a 60 GHz CMOS LNA.

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