Room‐temperature operation of transistor vertical‐cavity surface‐emitting laser | Zendy

Yu X. | Zendy; Xiang Y. | Zendy; Berggren J. | Zendy; Zabel T. | Zendy; Hammar M. | Zendy; Akram N. | Zendy; Shi W. | Zendy; Chrostowski L. | Zendy

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Room‐temperature operation of transistor vertical‐cavity surface‐emitting laser

Author(s) -

Yu X.,

Xiang Y.,

Berggren J.,

Zabel T.,

Hammar M.,

Akram N.,

Shi W.,

Chrostowski L.

Publication year - 2013

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2012.4243

Subject(s) - materials science , optoelectronics , transistor , laser , vertical cavity surface emitting laser , semiconductor laser theory , optics , electrical engineering , semiconductor , voltage , engineering , physics

The first room‐temperature operation of a transistor vertical‐cavity surface‐emitting laser (T‐VCSEL) is demonstrated. Fabricated using an epitaxial regrowth process, the T‐VCSEL is electrically a pnp‐type bipolar junction transistor and consists of an undoped AlGaAs/GaAs bottom DBR, an InGaAs triple‐quantum‐well active layer, an Si/SiO 2 dielectric top DBR, and an intracavity contacting scheme with three electrical terminals. The output power is controlled by the base current in combination with the emitter‐collector voltage, showing a voltage‐controlled operation mode. A low threshold base‐current of 0.8 mA and an output power of 1.8 mW have been obtained at room temperature. Continuous‐wave operation was performed up to 50°C.

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