Open AccessRoom‐temperature operation of transistor vertical‐cavity surface‐emitting laser
Author(s) -
Yu X.,
Xiang Y.,
Berggren J.,
Zabel T.,
Hammar M.,
Akram N.,
Shi W.,
Chrostowski L.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2012.4243
Subject(s) - materials science , optoelectronics , transistor , vertical cavity surface emitting laser , laser , common emitter , bipolar junction transistor , voltage , junction temperature , gallium arsenide , continuous wave , power (physics) , optics , electrical engineering , physics , engineering , quantum mechanics
The first room‐temperature operation of a transistor vertical‐cavity surface‐emitting laser (T‐VCSEL) is demonstrated. Fabricated using an epitaxial regrowth process, the T‐VCSEL is electrically a pnp‐type bipolar junction transistor and consists of an undoped AlGaAs/GaAs bottom DBR, an InGaAs triple‐quantum‐well active layer, an Si/SiO 2 dielectric top DBR, and an intracavity contacting scheme with three electrical terminals. The output power is controlled by the base current in combination with the emitter‐collector voltage, showing a voltage‐controlled operation mode. A low threshold base‐current of 0.8 mA and an output power of 1.8 mW have been obtained at room temperature. Continuous‐wave operation was performed up to 50°C.