Open AccessDC and RF characteristics of In 0.52 Al 0.48 As/In 0.7 Ga 0.3 As HEMTs at 300 and 16 K
Author(s) -
Endoh A.,
Watanabe I.,
Mimura T.,
Matsui T.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2012.4180
Subject(s) - transconductance , cutoff frequency , materials science , cutoff , radio frequency , analytical chemistry (journal) , electron , optoelectronics , electrical engineering , atomic physics , physics , chemistry , transistor , voltage , engineering , quantum mechanics , chromatography
Pseudomorphic In 0.52 Al 0.48 As/In 0.7 Ga 0.3 As HEMTs have been fabricated in the gate length L g range of 50 to 700 nm and their DC and RF characteristics measured at 300 and 16 K. The maximum drain‐source current I ds , the maximum transconductance g m_max and the cutoff frequency f T values increased at 16 K as expected. The ratios g m_max (16 K)/ g m_max (300 K) and f T (16 K)/ f T (300 K) decreased with decreasing L g , which results from the enhancement of the ballistic transport of electrons.