Open AccessHigh‐performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide
Author(s) -
Cai ChunHua,
Qin Ming
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2012.4141
Subject(s) - materials science , capacitive sensing , graphene , optoelectronics , silicon , oxide , atmospheric temperature range , silicon bandgap temperature sensor , temperature measurement , silicon oxide , cmos , electrical engineering , nanotechnology , voltage , silicon nitride , engineering , physics , meteorology , metallurgy , voltage divider , dropout voltage , quantum mechanics
A high‐performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide (GO) is presented. Compared with typical CMOS integrated temperature sensors, the sensitivity of this bulk silicon interdigital capacitive temperature sensor was improved significantly by using GO as sensing material, and this temperature sensor can operate in the range of − 70 to 40°C.