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Power‐scaling properties of apertured microchip vertical external‐cavity surface‐emitting lasers
Author(s) -
Vetter S.L.,
Zhang Y.,
Gu E.,
Dawson M.D.,
Calvez S.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2012.3912
Subject(s) - laser , materials science , optoelectronics , scaling , semiconductor laser theory , optics , power (physics) , laser power scaling , diode , physics , mathematics , geometry , quantum mechanics
Presented is the power‐scaling characteristics of microchip vertical external‐cavity surface‐emitting lasers which include grating apertures for mode selection. Multi‐Watt multi‐lateral‐mode emission at a wavelength of 1060 nm is obtained with sub‐linear increase in maximum output power with aperture‐size. It is also shown that the polarisation is only set by the grating lines for high‐order modes which interact sufficiently with the grating.

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