Open AccessHigh performance floating‐gate technology compatible antifuse
Author(s) -
Xie Xiaodong,
Li Wei,
Li Jianjun,
Wang Gang
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2012.3574
Subject(s) - materials science , dielectric , dielectric strength , ohmic contact , optoelectronics , layer (electronics) , electrical engineering , time dependent gate oxide breakdown , gate oxide , electronic engineering , composite material , voltage , engineering , transistor
An antifuse structure that is fully compatible with the standard floating‐gate technology is presented. The antifuse consists of an oxide‐nitride‐oxide dielectric layer, sandwiched between polysilicon and N‐well layers. The characteristics of the antifuse are investigated. The off‐state resistance of the antifuse is larger than 10 GΩ. The programmed antifuses show linear ohmic characteristics and have a tight resistance distribution centred around 350 Ω. The time dependent dielectric breakdown measurements show that the extrapolated lifetime of the unprogrammed antifuse at 5.5 V is as long as 40 years, and the resistance change of post‐program antifuses under the continuous reading mode test is lower than 5%.